SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving reverse breakdown voltage.

SOLUTION: A semiconductor device comprises: a semiconductor layer 100 of one conductive type; an insulating layer 130; semiconductor layers 210 provided in the insulating layer; active elements 20 provided in the semiconductor layers 210; a semiconductor region 112 of the other conductive type provided on a primary surface 201 on the semiconductor layer 100; a semiconductor region 114 of the other conductive type that is provided in the semiconductor region 112 and has a high impurity concentration than the semiconductor region 112; a conductor 154 provided in a through hole 144 in the insulating layer 130 so as to connect the semiconductor region 114; conductors 214, which are provided on or in the insulating layer 130, that is provided around the conductor 154 and in which outside end portions are located at a more outer side than the semiconductor region 114; a conductor 192 provided in connection with the conductor 154 and the conductors 214; and conductors 152 and 120 provided in connection with the semiconductor layer 100.

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