| 摘要 |
A field effect gas sensor (1) for detection of at least one non-hydrogen containing substance in a gas comprising hydrogen or hydrogen-containing substances. The field effect gas sensor comprises a semiconductor layer (2,3) having a surface, at least one ohmic contact (8) contacting the semiconductor (3), a first electron insulating layer (7) covering at least a part of the surface of the semiconductor layer, a second insulating layer (11) comprising a material substantially chemically inert to hydrogen or hydrogen-containing substances, the second insulating layer contacting at least one of the first electron insulating layer (7) and the semiconductor layer (3), at least one electrical contact (12) contacting the second insulating material (11) and comprising a conducting, semi-conducting and/or ion conducting layer. The field effect gas sensor is configured so interaction of the at least one non-hydrogen containing substance with at least part of the at least one electrical contact affects the work function of the conducting, semi-conducting and/or ion conducting layer (12) and/or the electric field in the semiconductor layer (3) in such way that the current-voltage (I-V) or the capacitance-voltage (C-V) characteristics of said field effect gas sensor are changed, wherein the change in I-V or C-V characteristics provide information about the presence of said at least one non-hydrogen containing substance in said gas. Use of the field effect gas sensor for EGR (Exhaust Gas Recirculation) applications. Use of a material substantially chemically inert to hydrogen in a field effect gas sensor.
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