NONVOLATILE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A nonvolatile memory device (10A) comprises an upper electrode layer (2); a lower electrode layer (4); a resistance variable layer (3) sandwiched between the upper electrode layer (2) and the lower electrode layer (4); and a charge diffusion prevention mask (1A) formed on a portion of the upper electrode layer (2); wherein the resistance variable layer (3) includes a first film comprising oxygen-deficient transition metal oxide and a second film comprising oxygen-deficient transition metal oxide which is higher in oxygen content than the first film; at least one of the upper electrode layer (2) and the lower electrode layer (4) comprises a simple substance or alloy of a platinum group element; and the charge diffusion prevention mask (1A) is insulative, and is lower in etching rate of dry etching than the upper electrode layer (2) and the lower electrode layer (4).