METHOD FOR FORMING THE PATTERN IN THE SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a semiconductor device is provided to easily form a minute contact hole pattern by improving a pattern profile and critical dimension uniformity when executing a post expose bake about a first photosensitive film and a second photosensitive film. CONSTITUTION: A reflection barrier layer(15) is formed on the upper side of an etched layer(10). A first photosensitive film is spread on the upper side of the reflection barrier layer. A first photosensitive film pattern(20a) is formed by executing a developing process of the first photosensitive film. A second photosensitive film is spread on the upper side of the etched layer including the first photosensitive film. Exposure and second bake processes of the second photosensitive film are executed. A second photosensitive film pattern(25a) is formed by executing a developing process of the exposed second photosensitive film.