| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist composition and a resist pattern formation method with excellent lithographic properties and excellent resist pattern shapes. <P>SOLUTION: The resist composition contains: a base component (A) whose solubility in developing solution is changed by action of acid; an acid generator component (B) generating acid by light exposure; and a nitrogen-containing organic compound (D1) represented by the general formula (d1). <P>COPYRIGHT: (C)2012,JPO&INPIT |
