| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor element having a bump array which is hard to cause a short circuit between bumps, with no increase in effective area, using a high-density flip-chip junction method. <P>SOLUTION: An expanded square lattice includes a bump 9 and an electrode 11 arrayed in square lattice of side length R, with four square lattices being arranged. The bump is matched with the electrode at a corner. Relating to two sides of first set that face each other in the expanded square lattice, a central bump is deviated from the side by a(>0) in orthogonal direction. Relating to two sides of other second set, the central bump is deviated from the side by b(>0) in orthogonal direction. A bump positioned at the center of the expanded square lattice is deviated by the deviation a synthesized with the deviation b. Here, R, a, and b satisfy ä(a/R)-1}<SP POS="POST">2</SP>+ä(b/R)-1}<SP POS="POST">2</SP>>1....(1). <P>COPYRIGHT: (C)2012,JPO&INPIT |
