| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polishing liquid composition which can effectively reduce an LPD having a size of 50 nm or smaller, which is formed on a surface of a wafer, in a polishing process of the semiconductor wafer. <P>SOLUTION: The polishing liquid composition for the semiconductor wafer includes water, silica particles, an alkali compound, a water-soluble high polymer compound and polyethylene glycol, and satisfies following conditions (a) to (c): (a) a shape factor SF1 of the silica particles is 1.00-1.20; (b) an average primary particle size of the silica particles measured by a nitrogen adsorption method is 5-100 nm and a coefficient of variation CV value of a particle size of the silica particles measured by an image analysis of a photograph obtained by using a transmission electron microscope is 0-15%; and (c) the polyethylene glycol has a number-average molecular weight of 200-15,000. <P>COPYRIGHT: (C)2012,JPO&INPIT |
