SILICON CARBIDE AND METHOD FOR MANUFACTURING THE SAME
摘要
Provided is a method for manufacturing silicon carbide. In the method, silicon source and carbon source are mixed, and the mixed sources are heated to form silicon carbide. Herein, in the mixing of the sources, a molar ratio of carbon contained in the carbon source to silicon contained in the silicon source is in a range of 1.5 to 3.
申请公布号
WO2012015261(A3)
申请公布日期
2012.04.19
申请号
WO2011KR05579
申请日期
2011.07.28
申请人
LG INNOTEK CO., LTD.;HAN, JUNG EUN;KIM, SANG MYUNG;KIM, BYUNG SOOK