发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device having high reliability in which malfunction caused by cracks on a bonding material and degradation of wiring is hard to occur even if a semiconductor element suffers from heat cycle by repeatedly operating at high temperatures. <P>SOLUTION: In a semiconductor device, a semiconductor element board 4 in which semiconductor elements 5 and 6 are fixed on top surfaces of electrode patterns 2 provided on an insulating substrate 1 via bonding materials 7 and 70 is disposed on a metal base plate 10, and at least the insulating substrate and the semiconductor elements are coated by a sealing resin 12. Additionally, expansion pressure members 9 that are provided so as to contact portions of the surfaces of the semiconductor elements opposite to the surfaces connected to the electrode patterns and have a large linear expansion coefficient than the sealing resin are provided so as to be covered with the sealing resin. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012079962(A) 申请公布日期 2012.04.19
申请号 JP20100224706 申请日期 2010.10.04
申请人 MITSUBISHI ELECTRIC CORP 发明人 HIRAMATSU SEIKI;NISHIMURA TAKASHI
分类号 H01L23/29;H01L23/31 主分类号 H01L23/29
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