| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of preventing a formed fine pattern from collapsing in a drying step. <P>SOLUTION: A manufacturing method of a semiconductor device for providing a formation region of a first pattern and a formation region of a second pattern which is adjacent to the formation region of the first pattern and at least whose pattern width is wider than the pattern width of the first pattern or whose aspect ratio is smaller than the aspect ratio of the first pattern for a workpiece comprises: a step of forming the first pattern in which a first film having a first contact angle is disposed on the outermost surface and the second pattern in which a second film having a second contact angle smaller than the contact angle of the first film is disposed on the outermost surface; a step of cleaning the formation regions of the first and second patterns and rinsing them with a rinse liquid; and a step of drying the rinsed first and second patterns. <P>COPYRIGHT: (C)2012,JPO&INPIT |
