SEMICONDUCTOR DEVICE, AND ABNORMALITY DIAGNOSIS METHOD OF BOOSTER CIRCUIT OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device and an abnormality diagnosis method of a booster circuit of the semiconductor device, capable of diagnosing abnormality of the booster circuit provided in the semiconductor device.

SOLUTION: A short SW43 is provided for short-circuiting between the input side and the output side of a booster circuit 42 boosting a power supply voltage VCC supplied from the positive electrode side of a battery cell Vc5 to a drive voltage VCC1 for driving a MOS transistor in a buffer amplifier 30 in a saturation region to be supplied as a drive voltage. When an output voltage Vout is an unusual voltage value at the voltage measurement of the battery cell Vc5, a comparison is made between the output voltage Vout (swoff) measured after turning off the short SW43 and supplying the drive voltage VCC1 boosted by the booster circuit 42 to the buffer amplifier 30 and the output voltage Vout (swon) measured after turning on the short SW43 and supplying the power supply voltage VCC to the buffer amplifier 30 without using the booster circuit 42 to diagnose abnormality of the booster circuit 42.

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