发明名称 |
Semiconductor Devices And Methods Of Fabricating The Same |
摘要 |
Provided is a semiconductor device. The semiconductor device may include a first semiconductor chip that includes a first through silicon via having a first protrusion height and a second through silicon via having a second protrusion height greater than the first protrusion height which are penetrating at least a portion of the first semiconductor chip, a second semiconductor chip may be electrically connected to the first through silicon via, and a third semiconductor chip may be electrically connected to the second through silicon via. |
申请公布号 |
US2012091580(A1) |
申请公布日期 |
2012.04.19 |
申请号 |
US201113211574 |
申请日期 |
2011.08.17 |
申请人 |
JEONG SEYOUNG;SONG HOGEON;LEE CHUNGSUN;LEE HO-JIN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JEONG SEYOUNG;SONG HOGEON;LEE CHUNGSUN;LEE HO-JIN |
分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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