发明名称 Semiconductor Devices And Methods Of Fabricating The Same
摘要 Provided is a semiconductor device. The semiconductor device may include a first semiconductor chip that includes a first through silicon via having a first protrusion height and a second through silicon via having a second protrusion height greater than the first protrusion height which are penetrating at least a portion of the first semiconductor chip, a second semiconductor chip may be electrically connected to the first through silicon via, and a third semiconductor chip may be electrically connected to the second through silicon via.
申请公布号 US2012091580(A1) 申请公布日期 2012.04.19
申请号 US201113211574 申请日期 2011.08.17
申请人 JEONG SEYOUNG;SONG HOGEON;LEE CHUNGSUN;LEE HO-JIN;SAMSUNG ELECTRONICS CO., LTD. 发明人 JEONG SEYOUNG;SONG HOGEON;LEE CHUNGSUN;LEE HO-JIN
分类号 H01L23/48 主分类号 H01L23/48
代理机构 代理人
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