发明名称 |
SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PROCESS FOR PRODUCTION THEREOF |
摘要 |
The present invention provides a semiconductor light-emitting element comprising an electrode part excellent in ohmic contact and capable of emitting light from the whole surface. An electrode layer placed on the light-extraction side comprises a metal part and plural openings. The metal part is so continuous that any pair of point-positions in the part is continuously connected without breaks, and the metal part in 95% or more of the whole area continues linearly without breaks by the openings in a straight distance of not more than⅓of the wavelength of light emitted from an active layer. The average opening diameter is of 10 nm to⅓of the wavelength of emitted light. The electrode layer has a thickness of 10 nm to 200 nm, and is in good ohmic contact with a semiconductor layer.
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申请公布号 |
US2012091499(A1) |
申请公布日期 |
2012.04.19 |
申请号 |
US201113335984 |
申请日期 |
2011.12.23 |
申请人 |
KITAGAWA RYOTA;ASAKAWA KOJI;FUJIMOTO AKIRA;NAKANISHI TSUTOMU;TSUTSUMI EISHI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
KITAGAWA RYOTA;ASAKAWA KOJI;FUJIMOTO AKIRA;NAKANISHI TSUTOMU;TSUTSUMI EISHI |
分类号 |
H01L33/62;H01L33/30;H01L33/36;H01L33/38;H01L33/40 |
主分类号 |
H01L33/62 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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