| 摘要 |
PURPOSE: A non volatile memory which has a 3D structure is provided to integrate a diode with a membrane for a memory operation, thereby preventing reverse currents due to a malfunction. CONSTITUTION: Lateral electrodes(121,123,125,127) are formed on a substrate and expanded laterally so that the lateral electrodes have steps. A resistance changing layer(140) penetrates the lateral electrodes and is formed on an opened area and a side of a lateral electrode. A diode is formed on a side of the resistance changing layer and is integrated with the entire resistance changing layer. An upper vertical electrode(150) penetrates the lateral electrodes and closes the opened area by the diode. The lateral electrodes are separated by insulating films each other. The lateral electrodes arranged in a lower part have larger areas than the lateral electrodes arranged in an upper part.
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