| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element that simultaneously satisfies high luminance, high efficiency, and high reliability. <P>SOLUTION: A semiconductor light-emitting element comprises: a stacked structure including a first semiconductor layer of a first conductive type composed of a nitride-based semiconductor, a second semiconductor layer of a second conductive type composed of a nitride-based semiconductor, and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer; and an electrode including a first metal layer that is provided on the side of the second semiconductor layer opposite to the side on which the light-emitting layer is provided and contains silver or silver alloy and a second metal layer that is provided on the side of the first metal layer opposite to the side on which the second semiconductor layer is provided and contains at least any element of gold, silver, palladium, rhodium, iridium, ruthenium, and osmium. The second semiconductor layer includes an interface layer that is provided in contact with the interface between the second semiconductor layer and the first metal layer and contains silver. The contact resistance between the second semiconductor layer and the electrode is less than or equal to 10×10<SP POS="POST">-4</SP>Ωcm<SP POS="POST">2</SP>. <P>COPYRIGHT: (C)2012,JPO&INPIT |
