| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a stacked semiconductor capable of obtaining excellent crystallinity in a device layer formed on a buffer layer while providing the buffer layer with conductivity, and to provide a method of manufacturing the same. <P>SOLUTION: An intermediate layer, in which first buffer layers and second buffer layers are alternately and repeatedly stacked more than or equal to three times on a substrate composed of a different material from that of a GaN-based nitride semiconductor film, is formed. The GaN-based nitride semiconductor film is grown on the intermediate layer to form a device layer. The first buffer layer is formed by growing the GaN-based nitride semiconductor film while doping silicon at a lower temperature than the single-crystal growth temperature. The second buffer layer is formed by alternately and repeatedly growing two kinds of GaN-based nitride semiconductor films having a different composition to each other while doping silicon at the single-crystal growth temperature. The first buffer layer is silicon-doped at a higher concentration than the second buffer layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
