发明名称 |
PLASMA PROCESSING APPARATUS |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus which prevents fine foreign matters reflected by an inner wall of a vacuum vessel and a turbo molecular pump blade, etc on a flow of processing gas from being reached to a wafer on a sample holder again in order to prevent degradation of productivity of a semiconductor device caused by fine foreign matters generated in a plasma processing chamber. <P>SOLUTION: An etching processing apparatus comprises a plasma generating device; a vacuum chamber 100 which can be depressurized; a gas supply apparatus for supplying gas into the vacuum chamber 100; a sample holder 113 for holding a wafer 128 to be plasma-processed; an apparatus for applying high frequency to the wafer 128 held on the sample holder 113; and a vacuum exhaust apparatus. The apparatus is provided with foreign matter blocking plates 201 for preventing fine foreign matters 203 generated in the apparatus from being bounced by a vacuum exhaust system and a vacuum chamber wall such as the turbo molecular pump positioned at a downstream side from the wafer 128 to be plasma-processed and from reaching to the surface of the wafer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012079968(A) |
申请公布日期 |
2012.04.19 |
申请号 |
JP20100224796 |
申请日期 |
2010.10.04 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORP |
发明人 |
FURUSE MUNEO;FUKUYAMA RYOJI;TAMURA SATOYUKI;KOBAYASHI HIROYUKI |
分类号 |
H01L21/3065;H05H1/46 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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