发明名称 |
ATMOSPHERIC-PRESSURE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION |
摘要 |
Provided are silicon-containing films with a refractive index suitable for antireflection, articles having a surface comprising the films, and atmospheric-pressure plasma-enhanced chemical vapor deposition (AE-PECVD) processes for the formation of surface films and coatings. The processes generally include providing a substrate, providing a precursor comprising silicon, and reacting the precursor with a gas comprising nitrogen (N2) in a low-temperature plasma at atmospheric pressure, wherein the products of the reacting form a film on the substrate. An antireflection coating made by the process can have a refractive index of about 1.5 to about 2.2. Articles are provided having a surface that includes the antireflection coating. |
申请公布号 |
WO2012050869(A1) |
申请公布日期 |
2012.04.19 |
申请号 |
WO2011US53624 |
申请日期 |
2011.09.28 |
申请人 |
NDSU RESEARCH FOUNDATION;SRINIVASAN, GURUVENKET;SAILER, ROBERT |
发明人 |
SRINIVASAN, GURUVENKET;SAILER, ROBERT |
分类号 |
H05H1/24 |
主分类号 |
H05H1/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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