发明名称 |
MEMORY DEVICES AND MEMORY SYSTEMS INCLUDING DISCHARGE LINES AND METHODS OF FORMING |
摘要 |
A non-volatile memory device can include a word line that is operatively coupled to a non-volatile memory cell. A local bit line can be operatively coupled to the non-volatile memory cell. A discharge line that is associated with the local bit line can be configured to discharge the local bit line and a discharge diode can be electrically coupled between the local bit line and the discharge line. |
申请公布号 |
US2012092946(A1) |
申请公布日期 |
2012.04.19 |
申请号 |
US201113251611 |
申请日期 |
2011.10.03 |
申请人 |
KIM JIN-YOUNG;SONG KI WHAN;OH JAE HEE;JEONG JI-HYUN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM JIN-YOUNG;SONG KI WHAN;OH JAE HEE;JEONG JI-HYUN |
分类号 |
G11C7/12;H01L21/8239 |
主分类号 |
G11C7/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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