发明名称 MEMORY DEVICES AND MEMORY SYSTEMS INCLUDING DISCHARGE LINES AND METHODS OF FORMING
摘要 A non-volatile memory device can include a word line that is operatively coupled to a non-volatile memory cell. A local bit line can be operatively coupled to the non-volatile memory cell. A discharge line that is associated with the local bit line can be configured to discharge the local bit line and a discharge diode can be electrically coupled between the local bit line and the discharge line.
申请公布号 US2012092946(A1) 申请公布日期 2012.04.19
申请号 US201113251611 申请日期 2011.10.03
申请人 KIM JIN-YOUNG;SONG KI WHAN;OH JAE HEE;JEONG JI-HYUN;SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM JIN-YOUNG;SONG KI WHAN;OH JAE HEE;JEONG JI-HYUN
分类号 G11C7/12;H01L21/8239 主分类号 G11C7/12
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