METHOD OF MANUFACTURING NONVOLATILE MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a nonvolatile memory device, especially a method of manufacturing a three-dimensional semiconductor device capable of improving uniformity of a thickness of a semiconductor pattern, and to provide the three-dimensional semiconductor device manufactured by the method.

SOLUTION: A method of manufacturing a nonvolatile memory device comprises the steps of: forming a stacked film structure in which a plurality of first films (mold films) 120 and a plurality of second films (sacrificial films) are alternately stacked on a substrate 10; forming openings penetrating through the stacked film structure and then forming undercut areas around the openings; forming insulating spacers 155 that are partially disposed in the undercut areas; and forming semiconductor patterns 165 in the openings in which the insulating spacers 155 are formed.

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