| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the following problems: the loss of Cu is caused on a light absorption layer side in manufacturing or due to aged deterioration, so that photoelectric conversion efficiency may be decreased; and mutual diffusion between a buffer layer and a light absorption layer becomes excessive, so that photoelectric conversion efficiency may be decreased. <P>SOLUTION: A photoelectric conversion element includes: a light absorption layer which includes a compound semiconductor comprising Cu, a III-B group element and Se and capable of performing photoelectric conversion; a semiconductor layer provided on one side of the light absorption layer and including an element group A (the element group A is at least one selected from among Cd, Zn and In) and S; and an intermediate layer provided between the light absorption layer and the semiconductor layer and including the element group A, Cu and S. <P>COPYRIGHT: (C)2012,JPO&INPIT |
