| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a driving method for a semiconductor device that can perform highly-reliable writing operation at high speed. <P>SOLUTION: In a driving method for a semiconductor device in which writing with multiple values is performed, a signal line for controlling on/off of a writing transistor for writing is disposed along a bit line in a memory cell including a transistor including an oxide semiconductor layer, and the voltage applied to a capacitor at the readout operation is also utilized at the writing, thereby performing writing with multiple values. When the potential of the bit line is detected while performing the writing, whether the potential corresponding to the writing data is correctly applied to a floating gate or not can be checked without performing the writing verifying operation. <P>COPYRIGHT: (C)2012,JPO&INPIT |
