发明名称 SUBSTRATE PROCESSING APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To form an air flow reliably in a transfer chamber by reducing stagnation of air in the transfer chamber. <P>SOLUTION: The substrate processing apparatus comprises a processing chamber of substrate, a substrate holding body which carries a substrate, while holding, in the processing chamber and carries the substrate out of the processing chamber, a transfer chamber in which the charge operation for holding an unprocessed substrate on the substrate holding body and the discharge operation for taking out a processed substrate from the substrate holding body are carried out, and a clean unit which blows clean air into the transfer chamber. The clean unit is disposed at a corner in the transfer chamber configured to have a polygonal plane view. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012079907(A) 申请公布日期 2012.04.19
申请号 JP20100223418 申请日期 2010.10.01
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 NAKADA TAKAYUKI;TANIYAMA TOMOSHI
分类号 H01L21/31;C23C16/44;H01L21/22;H01L21/324;H01L21/677;H01L21/683 主分类号 H01L21/31
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