发明名称 |
LIGHTLY DOPED SILICON CARBIDE WAFER AND USE THEREOF IN HIGH POWER DEVICES |
摘要 |
A semiconductor device including a drift zone of a first conductivity type serving as a substrate layer having a front side and a back side. A first contact electrode is arranged at the front side of the drift zone. A control region is arranged at the front side and controls an injection of carriers of at least the first conductivity type into the drift zone. A second contact electrode is arranged at the backside of the drift zone. The drift zone is arranged to carry a carrier flow between the first and the second contact electrode. The drift zone includes a silicon carbide wafer with a net carrier concentration less than 1015 cm−3 and a carrier lifetime of at least 50 ns.
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申请公布号 |
US2012091471(A1) |
申请公布日期 |
2012.04.19 |
申请号 |
US201113340192 |
申请日期 |
2011.12.29 |
申请人 |
ELLISON ALEXANDRE;MAGNUSSON BJOERN;VEHANEN ASKO;STEPHANI DIETRICH;MITLEHNER HEINZ;FRIEDRICHS PETER;SICED ELECTRONICS DEVELOPMENT GMBH;NORSTEL AB |
发明人 |
ELLISON ALEXANDRE;MAGNUSSON BJOERN;VEHANEN ASKO;STEPHANI DIETRICH;MITLEHNER HEINZ;FRIEDRICHS PETER |
分类号 |
C30B29/36;H01L29/739;C30B25/00;H01L21/04;H01L21/205;H01L21/324;H01L21/336;H01L29/12;H01L29/161;H01L29/24;H01L29/78 |
主分类号 |
C30B29/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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