发明名称 METHOD FOR THE GALVANIC GENERATION OF CONTACT STRUCTURES ON WAFERS FOR THE PRODUCTION OF SOLAR CELLS AND MODULES
摘要 The invention relates to a method for the galvanic generation of contact structures on wafers for the production of solar cells and modules. The back sides are covered on wafers to which back metallization has already been applied and which have back contacts as well as opened surfaces for the contact structures in the anti-reflection and passivation layer of the front side. In the subsequent galvanic steps for generating the contact structures on the front side, the back side contacts are thus protected and are not subjected to attacks during the galvanic process.
申请公布号 WO2012049281(A2) 申请公布日期 2012.04.19
申请号 WO2011EP67957 申请日期 2011.10.14
申请人 ROTH & RAU AG;PETRI, MARC;BOEHME, RICO 发明人 PETRI, MARC;BOEHME, RICO
分类号 H01L31/05 主分类号 H01L31/05
代理机构 代理人
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