SILICON CARBIDE AND METHOD FOR MANUFACTURING THE SAME
摘要
Disclosed are a silicon carbide and a method for manufacturing the same. The method for manufacturing silicon carbide includes mixing a silicon source with a carbon source, and heating a mixture of the silicon and carbon sources to form the silicon carbide. At least one of the silicon source and the carbon source has an average grain size of about 10nm to about 100nm.
申请公布号
WO2012015262(A3)
申请公布日期
2012.04.19
申请号
WO2011KR05580
申请日期
2011.07.28
申请人
LG INNOTEK CO., LTD.;KIM, BYUNG SOOK;HAN, JUNG EUN;KIM, SANG MYUNG