METHOD AND SYSTEM FOR FORMING HIGH ACCURACY PATTERNS USING CHARGED PARTICLE BEAM LITHOGRAPHY
摘要
A method and system for fracturing or mask data preparation for charged particle beam lithography are disclosed in which accuracy and/or edge slope of a pattern formed on a surface by a set of charged particle beam shots is enhanced by use of partially-overlapping shots. In some embodiments, dosages of the shots may vary with respect to each other before proximity effect correction. Particle beam simulation may be used to calculate the pattern and the edge slope. Enhanced edge slope can improve critical dimension (CD) variation and line-edge roughness (LER) of the pattern produced on the surface.
申请公布号
WO2012051082(A2)
申请公布日期
2012.04.19
申请号
WO2011US55536
申请日期
2011.10.09
申请人
D2S, INC.;FUJIMURA, AKIRA;HAGIWARA, KAZUYUKI;MEIER, STEPHEN F.;BORK, INGO
发明人
FUJIMURA, AKIRA;HAGIWARA, KAZUYUKI;MEIER, STEPHEN F.;BORK, INGO