发明名称 |
STRAINED STRUCTURE OF A P-TYPE FIELD EFFECT TRANSISTOR |
摘要 |
In a p-type field effect transistor, a pair of spacers are formed over the top surface of a substrate. A channel recess cavity includes an indentation in the substrate top surface between the pair of spacers. A gate stack has a bottom portion in the channel recess cavity and a top portion extending outside the channel recess cavity. A source/drain (S/D) recess cavity has a bottom surface and sidewalls below the substrate top surface. The S/D recess cavity has a portion extending below the gate stack. A strained material is filled the S/D recess cavity |
申请公布号 |
US2012091540(A1) |
申请公布日期 |
2012.04.19 |
申请号 |
US20110984703 |
申请日期 |
2011.01.05 |
申请人 |
CHENG CHUN-FAI;FUNG KA-HING;HUANG LI-PING;LU WEI-YUAN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHENG CHUN-FAI;FUNG KA-HING;HUANG LI-PING;LU WEI-YUAN |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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