| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technique capable of satisfying both improvement of withstand voltage and prevention of generation of defects of a semiconductor device. <P>SOLUTION: A semiconductor device 10 comprises: a support layer 2; an insulating layer 12 that is provided on the support layer 2 and in which cavities 4 are formed in a portion thereof; and a semiconductor layer 14 that is provided on the insulating layer 12 and in which a semiconductor element structure including a plurality kinds of impurity regions 20, 23, and 24 is formed. The insulating layer 12 has first portions 8 having a thin film thickness and second portions 6 having a thick film thickness between the support layer 2 and the semiconductor layer 14. Hollows 22 constituted from the first portions 8 and the second portions 6 are formed on the semiconductor layer 14 side. The cavities 4 are provided in the second portions 6 of the insulating layer 12. <P>COPYRIGHT: (C)2012,JPO&INPIT |
