| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which has an electrode part formed by filling two conductors in holes provided on a semiconductor substrate through insulators, and a structure suitable for increasing a capacity between two conductors. <P>SOLUTION: A plurality of bottomed holes 20 opening to a surface 11 are provided in a first region 1 of a semiconductor substrate 10, second through holes 30 are provided in a second region 2, and the bottomed hole 20 has a hole width smaller than that of the through hole 30. Laminate structures formed by holding an insulator 50 between both of conductors 40 and 60 are filled in the bottomed holes 20 and through holes 30 and are continuously formed between a plurality of bottomed holes 20 in the first region 1, and the first region 1 is formed as a capacity formation part by the laminate structure. Each of conductors 40 and 60 in the bottomed holes 20 are electrically connected to each of conductors 40 and 60 in the through holes 30, and they are extracted to front ans rear faces 11 and 12 of the semiconductor substrate 10. <P>COPYRIGHT: (C)2012,JPO&INPIT |
