Metal-Insulator-Metal Capacitor and Method for Manufacturing Thereof

摘要

The disclosure provides a method for producing a stack of layers on a semiconductor substrate. The method includes producing a substrate a first conductive layer; and producing by ALD a sub-stack of layers on said conductive layer, at least one of said layers of the sub-stack being a TiO2 layer, the other layers of the sub-stack being layers of a dielectric material having a composition suitable to form a cubic perovskite phase upon crystallization of said sub-stack of layers. Crystallization is obtained via heat treatment. When used in a metal-insulator-metal capacitor, the stack of layers can provide improved characteristics as a consequence of the TiO2 layer being present in the sub-stack.