发明名称 |
METHOD AND APPARATUS FOR MANUFACTURING THREE-DIMENSIONAL- STRUCTURE MEMORY DEVICE |
摘要 |
A method for manufacturing a memory device having a three-dimensional structure according to one embodiment of the present invention comprises: a step for alternatingly laminating one or more insulation layers and one or more sacrificial layers on a substrate; a step for forming a penetration hole for penetrating the insulation layer and the sacrificial layer; a step for forming a pattern for filling up the penetration hole; a step for forming an opening for penetrating the insulation layer and the sacrificial layer; and a step for removing the sacrificial layer by supplying an etchant through the opening, wherein the step for laminating the insulation layer includes a step for evaporating a silicon oxide film by supplying to the substrate at least one gas selected from the group consisting of SiH4, Si2H6, Si3H8, and Si4H10, and the step for laminating the sacrificial layer includes a step for evaporating a nitride film by supplying to the substrate at least one gas selected from the group consisting of SiH4, Si2H6, Si3H8, Si4H10, and SiCl2H2, and a gas from the ammonia series. |
申请公布号 |
WO2012050322(A2) |
申请公布日期 |
2012.04.19 |
申请号 |
WO2011KR07403 |
申请日期 |
2011.10.06 |
申请人 |
EUGENE TECHNOLOGY CO., LTD.;CHO, SUNG KIL;KIM, HAI WON;WOO, SANG HO;SHIN, SEUNG WOO;JANG, GIL SUN;OH, WAN SUK |
发明人 |
CHO, SUNG KIL;KIM, HAI WON;WOO, SANG HO;SHIN, SEUNG WOO;JANG, GIL SUN;OH, WAN SUK |
分类号 |
H01L21/8247;H01L21/3065;H01L27/115 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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