| 摘要 |
<p>An LED chip and method of fabricating the same is disclosed that comprises a plurality of sub-LEDs, said sub-LEDs interconnected such that the voltage necessary to drive said sub-LEDs is dependent on the number of said interconnected sub-LEDs and the junction voltage of said sub-LEDs. Each of said interconnected sub-LEDs comprising an n-type semiconductor layer (100), a p-type semiconductor layer (102), and an active or quantum well region interposed between the n-type and p-type layers. The monolithic LED chip further comprising a p-electrode (118) having a lead (104) that is accessible from a point on a surface opposite of a primary emission surface of the monolithic LED chip, the p-electrode electrically connected to the p-type layer, and an n-electrode (116) having a lead that is accessible from a point on the surface opposite of the primary emission surface, the n-electrode electrically connected to the n-type layer. These sub-LEDs interconnected by at least a metallization layer on the n-type and p-type layers, which is insulated so that it does not short the sub-LEDs. Further, the LED chip is capable of being electrically coupled for operation without wire bonds.</p> |
