A LIGHT EMITTING DEVICE AND A METHOD OF FABRICATING THE LIGHT EMITTING DEVICE

摘要

PURPOSE: A light emitting device and a manufacturing method thereof are provided to control crystal defect due to lattice constant difference by forming an electric potential collecting layer capable of intentionally generating a screw type electric potential density on an undoped semiconductor layer. CONSTITUTION: A buffer layer(120) is formed on a substrate(110). An undoped semiconductor layer(130) is formed on the buffer layer. An electric potential collecting layer(140) is formed on the buffer layer. A first electrical conductive semiconductor layer(612) is formed on the electric potential collecting layer. An active layer(614) is formed on the first electrical conductive semiconductor layer. A second electrical conductive semiconductor layer(616) is formed on the active layer. A v-groove is formed on one side of the electric potential collecting layer in which adjacent electric potentials are collected.