发明名称 |
SOI SUBSTRATE |
摘要 |
The purpose of the invention is to provide an SOI substrate for a power semiconductor device which does not contain rare metals and has no cooling mechanism, by simultaneously solving both the problems relating to conventional SOI substrates in which a carbon film is used as an insulating layer (I layer) and the problems relating to diamond synthesis by the HFCVD method. The SOI substrate for a power semiconductor device can be provided having a high withstand voltage and high thermal conductivity by making the SOI substrate an I layer having a hybrid construction of a carbon film and microcrystalline diamond film, or more preferably by making the SOI substrate an I layer further provided with a silicon oxide film (SiO2 film) between a silicon substrate and the carbon film.
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申请公布号 |
WO2012050122(A1) |
申请公布日期 |
2012.04.19 |
申请号 |
WO2011JP73412 |
申请日期 |
2011.10.12 |
申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY;YAMADA TAKATOSHI;HASEGAWA MASATAKA;ISHIHARA MASATOU;TSUGAWA KAZUO;KIM JAEHO;KOGA YOSHINORI |
发明人 |
YAMADA TAKATOSHI;HASEGAWA MASATAKA;ISHIHARA MASATOU;TSUGAWA KAZUO;KIM JAEHO;KOGA YOSHINORI |
分类号 |
H01L21/02;H01L21/20;H01L27/12 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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