发明名称 |
SENSOR, SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE |
摘要 |
A sensor includes: a base wafer containing silicon; a seed member provided directly or indirectly on the base wafer; and a photothermal absorber that is made of a Group 3-5 compound semiconductor lattice-matching or pseudo lattice-matching the seed member and being capable of generating a carrier upon absorbing light or heat, where the photothermal absorber outputs an electric signal in response to incident light to be introduced into the photothermal absorber or heat to be applied to the photothermal absorber. A semiconductor wafer includes: a base wafer containing silicon; a seed member provided directly or indirectly on the base wafer; and a photothermal absorber that is made of a Group 3-5 compound semiconductor lattice-matching or pseudo lattice-matching the seed member and being capable of generating a carrier upon absorbing light or heat. |
申请公布号 |
KR20120036801(A) |
申请公布日期 |
2012.04.18 |
申请号 |
KR20117026327 |
申请日期 |
2010.06.03 |
申请人 |
SUMITOMO CHEMICAL CO., LTD.;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY |
发明人 |
HATA MASAHIKO;TAKADA TOMOYUKI;YAMANAKA SADANORI;ITATANI TARO |
分类号 |
H01L31/10;G01J1/02;H01L27/14;H01L35/32 |
主分类号 |
H01L31/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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