发明名称 SUSCEPTOR FOR CHEMICAL VAPOR DEPOSITION APPARATUS AND CHEMICAL VAPOR DEPOSITION APPARATUS HAVING THE SAME
摘要 PURPOSE: A susceptor and a chemical vapor deposition apparatus having the same are provided to improve modulated complex lapped transform quality while controlling backside halo created in a process forming a single crystal film on the surface of a wafer. CONSTITUTION: A susceptor(180) comprises a bottom plate(181) and a lateral part(182) extended from the bottom plate. The lateral part is projected according to the circumference of the bottom plate as a fixed height. The lateral part comprises a supporting part(182a) in order to separately support a wafer(W) from the bottom plate. A space(S) is formed between the wafer settled on the supporting part and the bottom plate. A through opening part(182b) is formed in order to parallelly pass through the lateral part with the bottom plate.
申请公布号 KR20120036514(A) 申请公布日期 2012.04.18
申请号 KR20100098243 申请日期 2010.10.08
申请人 LG SILTRON INCORPORATED 发明人 KIM, IN KYUM
分类号 H01L21/68;H01L21/205 主分类号 H01L21/68
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