发明名称 |
Silicon wafer based structure for heterostructure solar cells |
摘要 |
<p>A multi-junction photovoltaic device includes a silicon substrate and a dielectric layer formed on the silicon substrate. A germanium layer is formed on the dielectric layer. The germanium includes a crystalline structure that is substantially similar to the crystalline structure of the silicon substrate. A first photovoltaic sub-cell includes a first plurality of doped semiconductor layers formed on the germanium layer. At least a second photovoltaic sub-cell includes a second plurality of doped semiconductor layers formed on the first photovoltaic sub-cell that is on the germanium layer that is on the dielectric layer.</p> |
申请公布号 |
GB2484605(A) |
申请公布日期 |
2012.04.18 |
申请号 |
GB20110019893 |
申请日期 |
2010.06.25 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
SUPRATIK GUHA;HAROLD HOVEL |
分类号 |
H01L31/0687;H01L31/18 |
主分类号 |
H01L31/0687 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|