Data integrity preservation in spin transfer torque magnetoresistive random access memory

摘要

Systems, circuits and methods for controlling the word line voltage applied to word line transistors in Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) are disclosed. One embodiment is directed to a STT-MRAM including a bit cell having a magnetic tunnel junction (MTJ) and a word line transistor. The bit cell is coupled to a bit line and a source line. A word line driver is coupled to a gate of the word line transistor. A write-back circuit configured to detect a read value of the bit cell and is configured to write back the read value to the bit cell after a read operation.