发明名称 |
Detection of arcing events in wafer plasma processing through monitoring of trace gas concentrations |
摘要 |
A method of detecting substrate arcing in a semiconductor plasma processing apparatus is provided. A substrate is placed on a substrate support in a reaction chamber of a plasma processing apparatus. Process gas is introduced into the reaction chamber. A plasma is generated from the process gas and the substrate is processed with the plasma. Intensities of real-time spectrometry signals of selected gas species produced in the reaction chamber during plasma processing are monitored. The selected gas species are generated by a substrate arcing event. The arcing event is detected when the intensities are above a threshold value. |
申请公布号 |
US8158017(B2) |
申请公布日期 |
2012.04.17 |
申请号 |
US20080149982 |
申请日期 |
2008.05.12 |
申请人 |
HUDSON ERIC;LAM RESEARCH CORPORATION |
发明人 |
HUDSON ERIC |
分类号 |
H01L21/3065 |
主分类号 |
H01L21/3065 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|