发明名称 |
Semiconductor device, polycrystalline semiconductor thin film, process for producing polycrystalline semiconductor thin film, field effect transistor, and process for producing field effect transistor |
摘要 |
An object of the present invention is to provide a novel semiconductor device which is excellent in stability, uniformity, reproducibility, heat resistance, durability and the like, and can exert excellent transistor properties. The semiconductor device is a thin-film transistor, and this thin-film transistor uses, as an active layer, a polycrystalline oxide semiconductor thin film containing In and two or more metals other than In and having an electron carrier concentration of less than 1×1018/cm3. |
申请公布号 |
US8158974(B2) |
申请公布日期 |
2012.04.17 |
申请号 |
US20080532259 |
申请日期 |
2008.03.21 |
申请人 |
YANO KOKI;INOUE KAZUYOSHI;IDEMITSU KOSAN CO., LTD. |
发明人 |
YANO KOKI;INOUE KAZUYOSHI |
分类号 |
H01L29/12 |
主分类号 |
H01L29/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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