发明名称 |
Methods of storing multiple data-bits in a non-volatile memory cell |
摘要 |
Methods of storing multiple data-bits in a non-volatile memory cell are carried out by trapping carriers in a composite trapping layer formed over a tunnel insulator layer. The composite trapping layer contains a plurality of band engineered sub-layers providing a plurality of charge trapping layers. |
申请公布号 |
US8159875(B2) |
申请公布日期 |
2012.04.17 |
申请号 |
US20090547130 |
申请日期 |
2009.08.25 |
申请人 |
BHATTACHARYYA ARUP;MICRON TECHNOLOGY, INC. |
发明人 |
BHATTACHARYYA ARUP |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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