发明名称 Methods of forming graphene/(multilayer) boron nitride for electronic device applications
摘要 Disclosed is a substrate-mediated assembly for graphene structures. According to an embodiment, long-range ordered, multilayer BN(111) films can be formed by repeated atomic layer deposition (ALD) of a boron-halide or organoborane precursor and NH3 onto a substrate followed by a high temperature anneal. Graphene can then be formed on an ordered BN(111) film by depositing carbon on the ordered surface of the BN(111) film.
申请公布号 US8158200(B2) 申请公布日期 2012.04.17
申请号 US20090543053 申请日期 2009.08.18
申请人 KELBER JEFFRY;UNIVERSITY OF NORTH TEXAS 发明人 KELBER JEFFRY
分类号 C23C16/34 主分类号 C23C16/34
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