| 发明名称 |
Capacitor of a semiconductor device |
| 摘要 |
A capacitor of a semiconductor device, and a method of manufacturing the capacitor of the semiconductor device, include a lower electrode layer, a dielectric layer, and an upper electrode layer, wherein the dielectric layer includes tantalum (Ta) oxide and an oxide of a Group 5 element, such as niobium (Nb) or vanadium (V). |
| 申请公布号 |
US8159016(B2) |
申请公布日期 |
2012.04.17 |
| 申请号 |
US20040011479 |
申请日期 |
2004.12.15 |
| 申请人 |
PARK SUNG-HO;LEE JUNG-HYUN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK SUNG-HO;LEE JUNG-HYUN |
| 分类号 |
H01L27/04;H01L27/108;H01L21/02;H01L21/316;H01L21/82;H01L21/822;H01L21/8242;H01L27/10 |
主分类号 |
H01L27/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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