发明名称 |
Localized biasing for silicon on insulator structures |
摘要 |
A silicon-on-insulator device has a localized biasing structure formed in the insulator layer of the SOI. The localized biasing structure includes a patterned conductor that provides a biasing signal to distinct regions of the silicon layer of the SOI. The conductor is recessed into the insulator layer to provide a substantially planar interface with the silicon layer. The conductor is connected to a bias voltage source. In an embodiment, a plurality of conductor is provided that respectively connected to a plurality of voltage sources. Thus, different regions of the silicon layer are biased by different bias signals. |
申请公布号 |
US8159014(B2) |
申请公布日期 |
2012.04.17 |
申请号 |
US20090565294 |
申请日期 |
2009.09.23 |
申请人 |
GONZALEZ FERNANDO;ZAHURAK JOHN K.;MICRON TECHNOLOGY, INC. |
发明人 |
GONZALEZ FERNANDO;ZAHURAK JOHN K. |
分类号 |
H01L29/94;H01L21/8242;H01L21/84;H01L27/02;H01L27/108;H01L27/12 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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