| 发明名称 |
Programmable resistive RAM and manufacturing method |
| 摘要 |
Programmable resistive RAM cells have a resistance that depends on the size of the contacts. Manufacturing methods and integrated circuits for lowered contact resistance are disclosed that have contacts of reduced size. |
| 申请公布号 |
US8158963(B2) |
申请公布日期 |
2012.04.17 |
| 申请号 |
US20090477811 |
申请日期 |
2009.06.03 |
| 申请人 |
HO CHIAHUA;LAI ERH-KUN;HSIEH KUANG YEU;MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
HO CHIAHUA;LAI ERH-KUN;HSIEH KUANG YEU |
| 分类号 |
H01L29/02;H01L47/00 |
主分类号 |
H01L29/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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