发明名称 SPUTTERING METHOD AND SPUTTERING APPARATUS
摘要 PROBLEM TO BE SOLVED: To solve the problem that it is liable to cause an abnormal discharge since a magnet assembly is continuously moved during film deposition to swing plasm in front of a target in the conventional magnetron sputtering system. SOLUTION: In this sputtering method, when a film deposition on a first treatment substrate S is completed and then a next treatment substrate is conveyed to a position facing a target, the magnetic flux formed in front of the target is moved in parallel to the target and held, thereby performing the film deposition in this state. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 KR101135389(B1) 申请公布日期 2012.04.17
申请号 KR20050022494 申请日期 2005.03.18
申请人 发明人
分类号 C23C14/35 主分类号 C23C14/35
代理机构 代理人
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