| 摘要 |
This invention provides a lateral high-voltage semiconductor device, which is a three-terminal one with two types of carriers for conduction and consists of a highest voltage region and a lowest voltage region referring to the substrate and a surface voltage-sustaining region between the highest voltage region and the lowest voltage region. The highest voltage region and the lowest region have an outer control terminal and an inner control terminal respectively, where one terminal is for controlling the flow of majorities of one conductivity type and another for controlling the flow of majorities of the other conductivity type. The potential of the inner control terminal is regulated by the voltage applied to the outer control terminal. The figure presented schematically shows a device by using an n-MOSFET to control the flow of electrons and a pnp bipolar transistor to control the flow of holes, and the potential of the base region of the pnp transistor is regulated by the voltage applied to the gate electrode of the n-MOSFET.
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