发明名称 Semiconductor device and manufacturing method thereof
摘要 A semiconductor device includes: a lower layer interconnection formed on a chip; an upper layer interconnection formed in an upper layer above the lower layer interconnection above the chip; an interconnection via formed to electrically connect the lower layer interconnection and the upper layer interconnection; a via-type electric fuse formed to electrically connect the lower layer interconnection and the upper layer interconnection. The fuse is cut through heat generation, and a sectional area of the fuse is smaller than a sectional area of the upper layer interconnection and a via diameter of the fuse is smaller than that of the interconnection via.
申请公布号 US8159041(B2) 申请公布日期 2012.04.17
申请号 US20100707292 申请日期 2010.02.17
申请人 SAITOU HIROKI;RENESAS ELECTRONICS CORPORATION 发明人 SAITOU HIROKI
分类号 H01L23/52 主分类号 H01L23/52
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