发明名称 |
Semiconductor device including insulating layer of cubic system or tetragonal system |
摘要 |
Provided is a semiconductor device including an insulating layer of a cubic system or a tetragonal system, having good electrical characteristics. The semiconductor device includes a semiconductor substrate including an active region, a transistor that is formed in the active region of the semiconductor substrate, an interlevel insulating layer that is formed on the semiconductor substrate and a contact plug that is formed in the interlevel insulating layer and that is electrically connected to the transistor. The semiconductor device may include a lower electrode that is formed on the interlevel insulating layer and that is electrically connected to the contact plug, an upper electrode that is formed on the lower electrode and an insulating layer of a cubic system or a tetragonal system including a metal silicate layer. The insulating layer may be formed between the lower electrode and the upper electrode. |
申请公布号 |
US8159012(B2) |
申请公布日期 |
2012.04.17 |
申请号 |
US20080238822 |
申请日期 |
2008.09.26 |
申请人 |
LEE JONG-CHEOL;LEE JUN-NOH;IM KI-VIN;PARK KI-YEON;LEE SUNG-HAE;KANG SANG-YEOL;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JONG-CHEOL;LEE JUN-NOH;IM KI-VIN;PARK KI-YEON;LEE SUNG-HAE;KANG SANG-YEOL |
分类号 |
H01L27/108 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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